Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate
Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate
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蓝宝石衬底上六方氮化镓中缺陷引起的拉曼散射与黄色发光跃迁的共振
DOI：
10.1063/1.120738
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
H. Riechert
中科院分区：
文献类型：
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作者：
D. Jiang;M. Ramsteiner;K. Ploog;H. Tews;A. Graber;R. Averbeck;H. Riechert
在蓝宝石衬底上分子束外延生长的六方GaN的低温拉曼谱中检测到了较强的缺陷特异性低频峰。发现这些峰的强度通过与黄色发光跃迁共振激发而增强。电子拉曼散射（ERS）的有效性，提出了他们的对应物在立方GaN GaAs [M. Ramsteiner，J. Menniger，O. Brandt，H. Yang和K. H. Ploog，Appl. Phys. Lett. 69，1276（1996）]，得到证实。我们的研究结果表明，所观察到的ERS峰与浅施主不一定是氢。一个拉曼峰在非常低的频率（11.7毫电子伏）的替代解释的伪本地化的振动模式。
Strong defect-specific low-frequency peaks are detected in low-temperature Raman spectra of hexagonal GaN grown by molecular beam epitaxy on sapphire substrate. The intensity of these peaks is found to be enhanced by excitation in resonance with yellow luminescence transitions. The validity of the assignment to electronic Raman scattering (ERS), as proposed before for their counterparts in cubic GaN on GaAs [M. Ramsteiner, J. Menniger, O. Brandt, H. Yang, and K. H. Ploog, Appl. Phys. Lett. 69, 1276 (1996)], is confirmed. Our results imply that the observed ERS peaks are related to shallow donors which are not necessarily hydrogenic. One Raman peak at very low frequency (11.7 meV) is alternatively explained by a pseudo-localized vibrational mode.