Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
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气源分子束外延生长的p型Ga0.892In0.108NxAs1−x (0⩽X⩽0.024)的退火行为
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
M. Geva
中科院分区：
文献类型：
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作者：
H. Xin;C. Tu;M. Geva
P 型 Be 掺杂 GaInNAs 层（1100 A 厚）通过氮自由基束源的气源分子束外延生长在 GaAs 衬底上。高分辨率 X 射线摇摆曲线表明，随着 N 浓度的增加，Ga0.892In0.108NxAs1−x 峰移近 GaAs 基底峰，表明应变减小。在 700°C 快速热退火 (RTA) 10 s 后，Ga0.892In0.108As 样品出现应变弛豫，但含 N 样品仍保持假晶应变，这表明 GaInNA 具有更好的热稳定性。由于大带隙弯曲，室温光致发光的波长从0.988μm红移到1.276μm，N浓度从0增加到0.024。二次离子质谱结果显示，没有Be扩散，而是氢与N一起掺入。自由载流子浓度降低了一个数量级，主要是由于H钝化，但在700°C RTA后，由于H浓度降低，自由载流子浓度增加到GaInAs的一半。那个...
P-type, Be-doped GaInNAs layers (1100 A thick) are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. High-resolution x-ray rocking curves show that the Ga0.892In0.108NxAs1−x peak shifts closer to the GaAs substrate peak with increasing N concentration, indicating reduced strain. After rapid thermal annealing (RTA) at 700 °C for 10 s, the Ga0.892In0.108As sample suffers strain relaxation, but the N-containing samples remain pseudomorphically strained, suggesting better thermal stability of GaInNAs. The wavelength of room-temperature photoluminescence redshifts from 0.988 to 1.276 μm, due to large band gap bowing, with N concentration increased from 0 to 0.024. Secondary ion mass spectrometry results show no Be diffusion, but hydrogen incorporation alongside N. The free carrier concentration is decreased by one order of magnitude mainly due to H passivation, but after RTA at 700 °C, it is increased to half that of GaInAs due to the reduced H concentration. Th...