Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device
Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device
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使用电阻率改变器件的多值非易失性静态随机存取存储器的电路实现、操作和仿真
DOI：
10.1155/2013/839198
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发表时间：
2013
影响因子：
0.4
通讯作者：
Akio Kitagawa
中科院分区：
文献类型：
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作者：
Kazuya Nakayama;Akio Kitagawa
我们提出并计算分析了一种使用ReRAM的多值非易失性SRAM。两个参考电阻和一个可编程电阻连接到标准SRAM单元的存储节点。所提出的9 T3 R MNV-SRAM单元可以存储2位存储器。在存储操作中，可以同时执行再调用操作和是否需要写脉冲的连续判定操作。因此，当使用所提出的方案时，不需要判决操作的持续时间和电路。为了实现稳定的召回操作，为了研究工艺变化容限和编程电阻的准确性，我们模拟了所提出的MNV-SRAM单元的晶体管宽度、可编程电阻的电阻、和电源电压与180 nm 3.3 V CMOS HSPICE器件模型。
We proposed and computationally analyzed a multivalued, nonvolatile SRAM using a ReRAM. Two reference resistors and a programmable resistor are connected to the storage nodes of a standard SRAM cell. The proposed 9T3R MNV‐SRAM cell can store 2 bits of memory. In the storing operation, the recall operation and the successive decision operation of whether or not write pulse is required can be performed simultaneously. Therefore, the duration of the decision operation and the circuit are not required when using the proposed scheme. In order to realize a stable recall operation, a certain current (or voltage) is applied to the cell before the power supply is turned on. To investigate the process variation tolerance and the accuracy of programmed resistance, we simulated the effect of variations in the width of the transistor of the proposed MNV‐SRAM cell, the resistance of the programmable resistor, and the power supply voltage with 180 nm 3.3 V CMOS HSPICE device models.