Fabrication and propagation characterization of As2S8 chalcogenide channel waveguide made by UV irradiation annealing.
Fabrication and propagation characterization of As2S8 chalcogenide channel waveguide made by UV irradiation annealing.
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DOI：
10.1364/ao.48.006442
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发表时间：
2009-11
期刊：
影响因子：
1.9
通讯作者：
L. Zou;Bao-xue Chen;H. Lin;H. Hamanaka;M. Iso
中科院分区：
文献类型：
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作者：
L. Zou;Bao-xue Chen;H. Lin;H. Hamanaka;M. Iso
详细研究了非晶态硫化物As_2S_8薄膜在紫外光照射和不同温度下退火后折射率的变化，结果表明，As_2S_8沟道波导中的折射率对比度为10(-2)量级。采用紫外井辐照和玻璃转变温度附近热处理的方法制作了As2S8沟道光波导，在1310 nm导模下具有较低的传输损耗0.76dB/cm和良好的传输特性。
Changes in the refractive index of amorphous chalcogenide As2S8 films upon ultraviolet (UV) exposure and annealing at different temperatures are investigated in detail, indicating an index contrast of the order of 10(-2) in the As2S8 channel waveguide. An As2S8 channel waveguide is fabricated using UV well irradiation and then annealing near the glass transition temperature and shows a low propagation loss of 0.76 dB/cm and good propagation characterization at the 1310 nm guided mode.