Magnetoimpedance sensitive to dc bias current in amorphous microwires
Magnetoimpedance sensitive to dc bias current in amorphous microwires
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DOI：
10.1063/1.3529946
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发表时间：
2010-12-20
影响因子：
4
通讯作者：
Gonzalez, J.
中科院分区：
文献类型：
--
作者：
Ipatov, M.;Zhukova, V.;Gonzalez, J.
我们研究了磁软微导线的阻抗对直流偏置电流I-B产生的内周磁场H-B的依赖关系，并从理论上和实验上证明，在螺旋磁各向异性导体中，高频阻抗依赖于直流偏置电流I-B（或相应的偏置场H-B），并且这种依赖关系是滞后的。我们通过实验观察到，改变偏置电流时，阻抗的变化大于35%。讨论了直流驱动磁阻抗效应的可能应用。(C) 2010年美国物理研究所。(doi: 10.1063/1.3529946)
We have investigated the impedance dependence of magnetically soft microwire on the internal circumferential magnetic field H-B created by the dc bias current I-B and theoretically and experimentally demonstrated that in a conductor with helical magnetic anisotropy, the high frequency impedance depends on the dc bias current I-B (or the corresponding bias field H-B) and this dependence is hysteretic. We have experimentally observed a change of impedance more than 35% upon changing the bias current. The possible applications of the dc current-driven magnetoimpedance effect are discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3529946]