Multiscale computational and experimental analysis of slip-GB reactions: In situ high-resolution electron backscattered diffraction and concurrent atomistic-continuum simulations
Multiscale computational and experimental analysis of slip-GB reactions: In situ high-resolution electron backscattered diffraction and concurrent atomistic-continuum simulations
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DOI：
10.1016/j.scriptamat.2023.115500
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发表时间：
2023-07
影响因子：
6
通讯作者：
Yang Su;T. Phan;Liming Xiong;J. Kacher
中科院分区：
文献类型：
--
作者：
Yang Su;T. Phan;Liming Xiong;J. Kacher
本文利用高分辨电子背散射衍射（EBSD）技术结合原子连续模拟（CAC）技术研究了Ni中位错滑移与晶界的相互作用。据发现，与滑移GB交叉点的局部应力首先增加后，堆积的位错，然后仍然很高，即使在相邻的晶粒中的位错的成核，只有放松后的成核位错传播远离GB由于更多的传入位错参与堆积。局部应力松弛伴随着原子尺度的GB结构重构，这不仅影响随后的位错传输，而且还影响远离GB的那些位错的配置。这些研究结果表明，在更高的长度尺度模型，如晶体塑性有限元纳入局部应力历史的重要性。
In this paper,in situhigh-resolution electron backscattered diffraction (EBSD) is combined with concurrent atomistic-continuum (CAC) simulations to study the interactions between dislocation-mediated slip and grain boundaries (GBs) in Ni. It is found that the local stress associated with slip-GB intersections first increases upon the pileup of dislocations, then remains high even after the nucleation of dislocations in the neighboring grain, only relaxing after the nucleated dislocations propagate away from the GB due to more incoming dislocations participating in the pileup. The local stress relaxation is accompanied by an atomic-scale GB structure reconfiguration, which affects not only the subsequent dislocation transmission, but also the configuration of those dislocations away from the GB. These findings demonstrate the importance of incorporating local stress history at higher length scale models, such as crystal plasticity finite element.