Fano resonances in semiconductor superlattices

Fano resonances in semiconductor superlattices
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DOI:
10.1103/physrevlett.81.874
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发表时间:
1998-07-27
影响因子:
8.6
通讯作者:
Kohler, K
Kohler, K
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Holfeld, CP;Loser, F;Kohler, K

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我们报道了在偏置半导体超晶格中首次观察到的Fano共振:激子Wannier-Stark梯形跃迁由于与较低跃迁的连续耦合而表现出不对称吸收。与其他已知的法诺共振的例子相比,法诺耦合可以通过改变超晶格上的静态场来连续调谐。线的形状和它们的耦合依赖性与理论非常一致。我们还研究了共振的退相动力学,并观察到随着Fano耦合的增加,退相增加。
We report the first observation of Fano resonances in biased semiconductor superlattices: The excitonic Wannier-Stark ladder transitions show asymmetric absorption due to the coupling to the continue of lower transitions. In contrast to other known examples of Fano resonances, the Fano coupling can be continuously tuned in this system by changing the static field across the superlattice. The line shapes and their coupling dependence are in excellent agreement with theory. We also investigate the dephasing dynamics of the resonances and observe an increase in dephasing with increasing Fano coupling.