Electronic structure of 3°-twisted bilayer graphene on 4H-SiC(0001)
Electronic structure of 3°-twisted bilayer graphene on 4H-SiC(0001)
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DOI：
10.1103/physrevmaterials.5.l051001
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发表时间：
2021-05-13
影响因子：
3.4
通讯作者：
Komori, Fumio
中科院分区：
文献类型：
--
作者：
Iimori, Takushi;Visikovskiy, Anton;Komori, Fumio
利用角分辨光电子能谱（ARPES）研究了3度扭曲双层石墨烯（TBG）的电子结构。通过在高真空中直接键合制备的亚毫米尺寸的TBG，使我们能够使用传统的同步加速器光的ARPES波段映射。结果表明，层间强耦合使狄拉克电子产生云纹势，并显著改变(K) over bar点周围的石墨烯能带，如能带分裂和电子速度降低。观察到的电子结构是一致地再现紧密结合计算与带展开方法。
The electronic structure of 3 degrees-twisted bilayer graphene (TBG) is studied by angle-resolved photoelectron spectroscopy (ARPES). Sub-mm-sized TBG prepared by direct bonding in a high vacuum enabled us to use conventional ARPES band mapping with synchrotron light. The results indicate that strong interlayer coupling makes a moire potential for the Dirac electrons and significantly modifies the graphene bands around the (K) over bar points such as the band splitting and electron velocity reduction. The observed electronic structure is consistently reproduced by tight-binding calculations combined with a band unfolding method.