Boron nitride nanotubes for spintronics.
Boron nitride nanotubes for spintronics.
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DOI：
10.3390/s140917655
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发表时间：
2014-09-22
期刊：
影响因子：
--
通讯作者：
Pati R
中科院分区：
文献类型：
--
作者：
Dhungana KB;Pati R
随着摩尔定律即将终结，研究人员正在寻找一种替代方法来处理信息。自旋电子学，即利用电子的自旋态来存储、处理和传递信息的学科，为维持信息产业目前的增长提供了令人兴奋的机遇。例如，巨磁阻（GMR）效应的发现为现代高密度数据存储设备奠定了基础，这是自旋电子学的一个重要成功案例；基于GMR的传感器应用广泛，从汽车工业到生物学领域都有涉及。近年来，随着纳米技术的巨大进步，自旋电子学已经突破了传统的全金属固态多层结构的界限，进入了一个新的前沿领域，其中纳米结构为自旋载流子提供了路径。人们探索了不同的材料，如有机和无机纳米结构在自旋电子学中的可能应用。在这篇简短的综述中，我们重点关注氮化硼纳米管（BNNT），它最近被探索用于自旋电子学的可能应用。与许多有机材料不同，BNNTs具有更高的热稳定性和更强的抗氧化性。据报道，无金属氟化BNNT表现出长程铁磁自旋有序，在远高于室温的温度下仍保持稳定。由于其较大的带隙，BNNTs也被探索用作隧道磁阻器件。此外，F - BNNT最近被预测为一种理想的自旋过滤器。本综述的目的是强调这些近期进展，以便未来实验学家和理论学家能够共同努力，实现基于BNNT的自旋电子学的真正潜力。
With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.
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