RF-sputtered Al-doped ZnO thin films: Optoelectrical properties and application in photovoltaic devices
RF-sputtered Al-doped ZnO thin films: Optoelectrical properties and application in photovoltaic devices
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DOI：
10.1002/pssa.201431107
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发表时间：
2014-11-01
影响因子：
2
通讯作者：
Kumar, Jitendra
中科院分区：
文献类型：
--
作者：
Chauhan, Ram Narayan;Anand, R. S.;Kumar, Jitendra
已经尝试通过在不同的氩气压力和80-95摄氏度的低衬底温度下的射频溅射来制备Al掺杂的ZnO薄膜，以确定使光学和电学特性对于它们在光伏器件中的应用有用的条件。氩气压力的增加被示出影响它们的形态，光学吸收，光致发光光谱，和电学行为。电阻率的增加归因于载流子迁移率的降低。能带隙的变化已被解释为调用Burstein-Moss加宽和带隙变窄的效果，由于载流子浓度的增加而产生。在0.15Pa的氩气压力下制备的AZO薄膜具有纤锌矿型六方结构，具有[0001]择优取向，在400- 800 nm波长范围内具有约85%的高透光率，电阻率为9.54 × 10 ~（-4）cm，是一种潜在的透明导电氧化物。此外，以AZO薄膜为阳极制备的有机太阳能电池和发光二极管的性能也得到了证实。
An attempt has been made to prepare Al-doped ZnO thin films by rf sputtering at different argon pressures and low substrate temperatures of 80-95 degrees C to ascertain the conditions rendering optical and electrical characteristics useful for their applications in photovoltaic devices. The increase in argon pressure is shown to influence their morphology, optical absorption, photoluminescence spectrum, and electrical behavior. The increase in resistivity is attributed to reduced carrier mobility. The variation in energy bandgap has been explained by invoking Burstein-Moss widening and bandgap narrowing effects arising due to increase in the carrier concentration. AZO films obtained at argon pressure of 0.15Pa exhibit (i) wurtzite-type hexagonal structure with [0001] preferred orientation, (ii) high optical transmittance of approximate to 85% in the wavelength range 400-800nm, and (iii) low electrical resistivity of 9.54x10(-4)cm and hence can be potential alternative transparent conducting oxides. Moreover, the performance of the organic solar cells and light-emitting diodes fabricated with AZO films as anode has been demonstrated.