RF properties of epitaxial lift-off HEMT devices
RF properties of epitaxial lift-off HEMT devices
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外延剥离 HEMT 器件的射频特性
DOI：
10.1109/16.239727
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
E. Smith
中科院分区：
文献类型：
--
作者：
P. Young;S. Alterovitz;R. Mena;E. Smith
含有GaAs HEMT和P-HEMT结构的外延层已经从GaAs衬底上剥离，并使用AlAs分离层附着到其他主衬底上。在剥离步骤之前和之后对器件进行晶片上RF探测，显示测得的S参数没有退化。最大稳定增益指示1- 2dB的增益的低频增强，对于所有剥离HEMT结构，一些器件显示出1 - 2 -20%的F/sub T/的一致增加。霍尔测量和小信号模型的比较表明，增益得到改善，这是最有可能与增强的载流子浓度。>
Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step, showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing a consistent increase of F/sub T/ of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration. >