An investigation of the effect of structural order on magnetostriction and magnetic behavior of Fe–Ga alloy thin films
An investigation of the effect of structural order on magnetostriction and magnetic behavior of Fe–Ga alloy thin films
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DOI：
10.1016/j.actamat.2010.03.023
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发表时间：
2010-06
期刊：
影响因子：
9.4
通讯作者：
A. Javed;T. Szumiata;N. Morley;M. Gibbs
中科院分区：
文献类型：
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作者：
A. Javed;T. Szumiata;N. Morley;M. Gibbs
本文报道了在各种生长条件下制备的Fe-Ga薄膜的综合研究结果。采用共溅射和蒸发技术在Si(100)衬底上(采用三种不同的生长参数组合)制备了Fe100−xGax(14⩽x⩽32)多晶薄膜。生长参数(溅射功率、Ga蒸发率和腔压)主要用来控制薄膜中的Fe/Ga比。X射线衍射分析表明，所有薄膜均具有垂直于薄膜平面的〈110〉晶体织构。当x=22时，晶格参数随%Ga的增加而增大，且与生长参数无关。转换电子穆斯堡尔谱研究表明，无序A2相在所有薄膜中占主导地位。结果表明，采用适当的真空镀膜工艺参数可以有效地抑制D03有序相的生成。对有效磁致伸缩常数随成分变化的系统研究支持这一结论。研究发现，无论溅射功率或蒸发速率如何，在低Ar气压下都可以制备出具有高饱和磁致伸缩常数和低应力的薄膜，这对微电子机械系统的应用具有重要的应用价值。
This paper reports results from a comprehensive study of Fe–Ga films fabricated over a wide range of growth conditions. Polycrystalline Fe100−xGaxfilms (14⩽x⩽32) were deposited (using three different combinations of growth parameters) on Si(100) using a co-sputtering and evaporation technique. The growth parameters (sputter power, Ga evaporation rate and chamber pressure) were used primarily to control the Fe:Ga ratio in the films. X-ray diffraction showed that all films had 〈110〉 crystallographic texture normal to the film plane. The lattice parameter increased with % Ga up to x=22 and was independent of growth parameters. Conversion electron Mössbauer spectroscopy studies showed a predominance of the disordered A2 phase in all films. It appears that the use of vacuum deposition with appropriate parameters can effectively suppress the D03ordered phase. Systematic studies of the effective magnetostriction constant as a function of composition support this conclusion. It was found that films of high effective saturation magnetostriction constant and low stress could be fabricated using low Ar pressure, irrespective of sputter power or evaporation rate, giving properties useful for application in microelectromechanical systems.