Anisotropy of Mobility Ratio Between Electron and Hole along Different Orientations in Binary and Ge Doped ReSi_<1.75>Single Crystals
Anisotropy of Mobility Ratio Between Electron and Hole along Different Orientations in Binary and Ge Doped ReSi_<1.75>Single Crystals
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二元及Ge掺杂ReSi_<1.75>单晶中电子与空穴沿不同取向的迁移率各向异性
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
H.Inui
中科院分区：
文献类型：
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作者：
H.Inui;H.Inui
