Thermally induced switching field distribution of a single CoPt dot in a large array
Thermally induced switching field distribution of a single CoPt dot in a large array
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大阵列中单个 CoPt 点的热感应开关场分布
DOI：
10.1088/0957-4484/21/3/035703
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发表时间：
2010
期刊：
影响因子：
3.5
通讯作者：
J. Lodder
中科院分区：
文献类型：
--
作者：
Johannes Bernardus Charles Engelen;M. Delalande;A. Fèbre;T. Bolhuis;T. Shimatsu;N. Kikuchi;L. Abelmann;J. Lodder
采用激光干涉光刻技术对co80pt20合金连续薄膜进行图像化，制备了具有垂直磁各向异性的磁点阵列。正如在大型点阵列中常见的那样，点之间的开关场差异很大。本文利用反常霍尔效应（AHE）研究了这种大开关场分布的起源。AHE的高灵敏度使我们能够在直径为180nm的80个点阵列中测量单个点的磁反转。通过取1000个磁滞回线，揭示了阵列内部单个点的热致开关场分布SFDT。将第一和最后两个开关点的SFDT拟合到Arrhenius模型中，观察到低场和高场下开关点的开关体积和磁各向异性有明显差异。
Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.