Performance improvement of gated silicon field emitters with a thin layer of boron nitride
Performance improvement of gated silicon field emitters with a thin layer of boron nitride
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具有薄层氮化硼的门控硅场发射器的性能改进
DOI：
10.1116/1.1370179
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发表时间：
2001
影响因子：
1.4
通讯作者：
Lihua Li
中科院分区：
文献类型：
--
作者：
H. Busta;D. Furst;R. Pryor;Lihua Li
经过完全处理的硼注入 n- 门控硅尖端阵列在 450°C 下通过反应溅射涂有约 50 nm 的碳掺杂 BN。 BN 涂层 6460 尖端阵列的电流-电压特性向较低栅极电压偏移了约 40-60 V，发射电流约为 100 μA。根据对代表性阵列的 Fowler-Nordheim 分析，涂层尖端的 Φ3/2/β 比率从 2.5×10−5 eV3/2 cm 降至 8.9×10−6 eV3/2 cm。这种下降归因于场转换系数β的增加。当在直流模式下以 40 mA/cm2 运行约 100 小时时，该阵列的性能得到改善，并且与裸硅发射器相比，对离子轰击的压力耐受性提高了 6 倍。
Fully processed boron implanted n−-gated silicon tip arrays were coated with about 50 nm of carbon-doped BN by reactive sputtering at 450 °C. The current–voltage characteristics of the BN coated 6460 tip arrays shifted by about 40–60 V towards lower gate voltages for emission currents of about 100 μA. From the Fowler–Nordheim analysis of representative arrays, the Φ3/2/β ratio decreased from 2.5×10−5 eV3/2 cm to 8.9×10−6 eV3/2 cm for the coated tips. This decrease is attributed to an increase in the field conversion factor β. The arrays improve in performance when operated at 40 mA/cm2 for about 100 h in direct current mode and show a factor of 6 increased pressure tolerance towards ion bombardment as compared to the bare silicon emitters.