Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer
Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer
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DOI：
10.1063/1.2769750
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发表时间：
2007-08
影响因子：
4
通讯作者：
T. Loh;H. S. Nguyen;R. Murthy;M. Yu;W. Loh;G. Lo;N. Balasubramanian;D. Kwong;J. Wang;S. J. Lee
中科院分区：
文献类型：
--
作者：
T. Loh;H. S. Nguyen;R. Murthy;M. Yu;W. Loh;G. Lo;N. Balasubramanian;D. Kwong;J. Wang;S. J. Lee
作者报告了使用 ∼14nm 低温 Si0.8Ge0.2 缓冲液，无需循环退火，在绝缘体上硅 p-i-n 台面型正入射光电二极管上选择性外延 Ge (400nm) 的性能。在-1V时，获得了1.5-2mA/cm2的非常低的体暗电流密度，表明材料质量良好，外围表面漏电流密度为14-19.5μA/cm2。对于直径为 28μm 的圆形光电二极管，在 -5V 下实现的最高外量子效率对于 850nm、1.3μm 和 1.56μm 光波长分别为 27%、9% 和 2.9%。 15×15μm2 方形光电二极管在−1V 时具有 3dB 带宽⩾15GHz。无需高温退火即可实现良好的性能，这表明 Ge/Si 光电二极管可以轻松集成到现有的互补金属氧化物半导体工艺中。
The authors report the performance of selective epitaxial Ge (400nm) on Si-on-insulator p-i-n mesa-type normal incidence photodiodes using ∼14nm low-temperature Si0.8Ge0.2 buffer without cyclic annealing. At −1V, very low bulk dark current densities of 1.5–2mA∕cm2 were obtained indicating good material quality, and the peripheral surface leakage current densities were 14–19.5μA∕cm. For 28μm diameter round photodiode, the highest achieved external quantum efficiencies at −5V were 27%, 9%, and 2.9% for 850nm, 1.3μm, and 1.56μm optical wavelengths, respectively. 15×15μm2 square photodiode has 3dB bandwidth ⩾15GHz at −1V. Good performance was achieved without high-temperature annealing, suggesting easy integration of Ge∕Si photodiode unto existing complementary metal-oxide-semiconductor process.