795 nm VCSELs for 87Rb based miniaturized atomic clock
795 nm VCSELs for 87Rb based miniaturized atomic clock
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用于基于 87Rb 的小型原子钟的 795 nm VCSEL
DOI:
10.3788/ope.20142201.0050
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发表时间:
2014
期刊:
影响因子:
--
通讯作者:
Wang, Li-Jun
中科院分区:
文献类型:
--
作者:
Zhang, Jian-Wei;Zhang, Xing;Zeng, Yu-Gang;Wang, Li-Jun
For the special requirements of the exciting source of a 87Rb based atomic clock for the miniaturization and high temperature conditions, a 795 nm Vertical Cavity Surface Emitting Laser(VCSEL)corresponding to the Rb atom energy level transition was designed and fabricated. Firstly, the energy levels and material gains of the InAlGaAs/AlGaAs Multiple Quantum Wells (MQWs) were calculated by the kp method to optimize the compositions and thicknesses of the quantum wells. Then, a Distributed Bragg Reflectors(DBRs) at 795 nm were designed and their reflection characteristics, longitudinal optical fields and averaged doping profiles were calculated and optimized using a one-dimensional transfer matrix method. Finally, the epitaxial structure of the 795 nm VCSEL with optimized MQWs and DBRs were grown on a GaAs substrate by Metal Organic Vapor Phase Epitaxy (MOVPE) and the oxide-confined 795 nm top-emitting VCSELs with unclosed-mesa structures were fabricated and characterized. Experimental results indicate that the packaged VCSELs can keep lasing under a cw current from 25 C to 85 C with power decreasing from 17 mW to 1.8 mW, the far field profiles are circular with a divergence angle of 15 and the temperature-shift of the lasing wavelength is 0.064 nm/C. Moreover, the lasing wavelength moves to the wavelength required by 87Rb atoms at an ambient temperature of 52 C and a current of 100 mA. The 795 nm VCSELs satisfy the basic requirements of 87Rb based miniaturized atom clocks for stable operation in a special wavelength and high-temperatures.