Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides
Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides
复制标题
通过单层 VI 族二硫属化物中的反常能斯特效应热驱动纯自旋和谷电流
DOI：
10.1103/physrevlett.115.246601
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发表时间：
2015
影响因子：
8.6
通讯作者：
Jauho A-P.
中科院分区：
文献类型：
--
作者：
Yu Xiao-Qin;Zhu Zhen-Gang;Su Gang;Jauho A-P.
分析了单层膜和其他VI族二硫族化合物的自旋和谷相关的反常能斯特效应。我们发现，纯自旋和谷电流可以产生垂直于在这些二维材料的平面中所施加的热梯度。这种效应为自旋热电子学的应用提供了一个通用的平台。引入自旋电流纯度因子来量化这种效应。当违反时间反演对称性时，例如，二维材料的绝缘磁性基板上，下降峰特征出现的总能斯特系数。对于浸渍状态，它被发现，只有一个自旋和从一个谷的载流子被驱动的温度梯度。
The spin and valley-dependent anomalous Nernst effects are analyzed for monolayerand other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g., two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the dip state it is found that carriers with only one spin and from one valley are driven by the temperature gradient.