Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors
Atomic Layer Deposition of TiO2 and ZrO2 Thin Films Using Heteroleptic Guanidinate Precursors
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DOI：
10.1002/cvde.201407115
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发表时间：
2014-09-01
影响因子：
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通讯作者：
Leskela, Markku
中科院分区：
文献类型：
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作者：
Kaipio, Mikko;Blanquart, Timothee;Leskela, Markku
本研究以水或臭氧为氧源，研究了两种异构型氨基胍前驱体[Ti(NEtMe)(3)(Guan-NEtMe)]和[Zr(NEtMe)(3)(Guan-NEtMe)]对二氧化钛和氧化锆的原子层沉积。所有过程在275℃的沉积温度下都表现出自限生长，尤其是锆前驱体具有很高的生长速率(在H2O/O-3中每循环0.8/1.0埃)。原子力显微镜(AFM)表明，薄膜也相对光滑。用X射线光电子能谱(XPS)和飞行时间弹性反冲检测分析(TOF-ERDA)分析了薄膜的成分。当使用臭氧作为氧源时，薄膜具有很高的纯度。全文：以异构胺/胍类金属前驱体为原料，臭氧和水为氧源，进行了二氧化钛和氧化锆的原子层沉积。并与前人的研究结果进行了比较，讨论了配体对前驱体性质的影响。
In this study the atomic layer deposition (ALD) of TiO2 and ZrO2 using two heteroleptic amido-guanidinate precursors, [Ti(NEtMe)(3)(guan-NEtMe)] and [Zr(NEtMe)(3)(guan-NEtMe)], together with water or ozone as oxygen sources, are investigated. All processes exhibit self-limiting growth at a deposition temperature of 275 degrees C. The zirconium precursor especially gives high growth rates (0.8/1.0 angstrom per cycle with H2O/O-3). The films are also relatively smooth, as determined by atomic force microscopy (AFM). The composition of the films is examined using X-ray photoelectron spectroscopy (XPS) and time of flight elastic recoil detection analysis (TOF-ERDA). When using ozone as the oxygen source the films present very high purity. The results are compared and discussed with respect to earlier studies on guanidinate, as well as homoleptic amido precursors.Full Paper: Atomic layer deposition of TiO2 and ZrO2 is performed using heteroleptic amido/guanidinate metal precursors, and ozone and water as oxygen sources. The results are compared to previous studies and the effect of the ligands on the precursor properties are discussed.