Configuration of dislocations in lateral overgrowth GaN films
Configuration of dislocations in lateral overgrowth GaN films
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横向生长 GaN 薄膜中位错的配置
DOI：
10.1063/1.370110
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发表时间：
1999
影响因子：
3.2
通讯作者：
S. Sakai
中科院分区：
文献类型：
--
作者：
M. Hao;S. Mahanty;T. Sugahara;Y. Morishima;H. Takenaka;J. Wang;S. Tottori;Katsushi Nishino;Y. Naoi;S. Sakai
用透射电子显微镜和阴极发光法研究了升华横向生长GaN和金属有机化学气相沉积薄膜的位错分布和发射轮廓。已观察到发射轮廓和位错分布之间的密切关系。结果表明，位错不仅影响带边发射，而且还影响黄光发射。观察到位错在过生长区横向扩展。讨论了位错传播方向改变的机制。
The dislocation distribution and emission profile of sublimation lateral overgrowth GaN and metalorganic chemical vapor deposition films have been studied using transmission electron microscopy and cathodoluminescence. A close relationship between the emission profile and the dislocation distribution has been observed. The results show that the dislocations not only affect the band edge emission, but also the yellow emission. It is observed that the dislocations propagate laterally in the overgrowth region. The mechanism of the change in the propagation direction of dislocations has been discussed.