The Influence of Film Morphology in High-Mobility Small-Molecule:Polymer Blend Organic Transistors
The Influence of Film Morphology in High-Mobility Small-Molecule:Polymer Blend Organic Transistors
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DOI：
10.1002/adfm.201000427
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发表时间：
2010-07-23
影响因子：
19
通讯作者：
Anthopoulos, Thomas D.
中科院分区：
文献类型：
--
作者：
Smith, Jeremy;Hamilton, Richard;Anthopoulos, Thomas D.
基于小分子半导体和聚合物混合物的有机场效应晶体管（ofet）显示出高性能有机电子应用的前景。本文研究了基于2,8-二氟-5,11-双（三乙基硅乙基）蒽噻吩-聚三芳胺共混薄膜的高迁移率p沟道有机晶体管的电荷输运特性。通过简单改变薄膜的加工条件，可以得到两种不同的薄膜微观结构：一种是小球晶（SG），另一种是大晶粒（LG）。电荷输运测量揭示了SG和LC薄膜微结构在两种不同温度下的热激活空穴输运。对于温度> - 115 K，导出了25-60 meV范围内的栅极电压相关活化能（E-A）。在温度
Organic field-effect transistors (OFETs) based upon blends of small molecular semiconductors and polymers show promise for high performance organic electronics applications. Here the charge transport characteristics of high mobility p-channel organic transistors based on 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene:poly(triarylamine) blend films are investigated. By simple alteration of the film processing conditions two distinct film microstructures can be obtained: one characterized by small spherulitic grains (SG) and one by large grains (LG). Charge transport measurements reveal thermally activated hole transport in both SG and LC film microstructures with two distinct temperature regimes. For temperatures >115 K, gate voltage dependent activation energies (E-A) in the range of 25-60 meV are derived. At temperatures