New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI
New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI
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DOI：
10.1109/ted.2008.924048
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发表时间：
2008-07-01
影响因子：
3.1
通讯作者：
Li, Zhaoji
中科院分区：
文献类型：
--
作者：
Luo, Xiaorong;Zhang, Bo;Li, Zhaoji
提出了一种新的SOI高压MOSFET结构及其击穿机理。该结构的特点是在部分SOI（TPSOI）上的埋氧层的顶部界面上的氧化物沟槽。位于沟槽中的反型电荷在高压阻断状态下增强了埋层的电场，并且硅窗口使耗尽区扩展到衬底中。这两种结构都对漂移区的电场进行调制，从而大大提高了TPSOI LDMOS的击穿电压。此外，Si窗口消除了自加热效应。分析了器件结构参数对器件特性的影响。在2 μ m厚埋氧层上覆盖2 μ m厚SOI层，模拟得到BV > 1200 V，埋层电场E-I > 700 V/μ m的TPSOI LDMOS，其最高温度比常规SOI和部分SOI器件分别降低了19和8.7 K。
A novel silicon-on-insulator (SOI) high-voltage MOSFET structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). Inversion charges,located in the trenches enhance the electric field of the buried layer in the high-voltage blocking state, and a silicon window makes the depletion region spread into the substrate. Both of them modulate the electric field in the drift region; therefore, the breakdown voltage (BV) for a TPSOI LDMOS is greatly enhanced. Moreover, the Si window alleviates the self-heating effect. The influences of the structure parameters on device characteristics are analyzed for the proposed device structure. The TPSOI LDMOS with BV > 1200 V and the buried-layer electric field of E-I > 700 V/mu m is obtained by the simulation on a 2-mu m-thick SOI layer over 2-mu m-thick buried oxide layer, and its maximal temperature reduces by 19 and 8.7 K in comparison with the conventional SOI and partial SOI devices.