Integrated circuit technology options for RFIC's - Present status and future directions
Integrated circuit technology options for RFIC's - Present status and future directions
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DOI：
10.1109/4.661204
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发表时间：
1998-03-01
影响因子：
5.4
通讯作者：
Larson, LE
中科院分区：
文献类型：
--
作者：
Larson, LE
本文将总结无线通信射频集成电路实施中涉及的技术权衡。无线电收发器电路具有非常广泛的要求，包括噪声系数、线性度、增益、相位噪声和功耗。将根据这些要求对每种竞争技术（Si CMOS 和双极结型晶体管 (BJT)、Si/SiGe HBT 和 GaAs MESFET、PHEMTS 和 HBT）的优缺点进行研究。
This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.