Single-Dislocation Schottky Diodes
Single-Dislocation Schottky Diodes
复制标题
单位错肖特基二极管
DOI：
10.1021/acs.nanolett.1c01081
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发表时间：
2021
期刊：
影响因子：
10.8
通讯作者：
Ma Xiuliang
中科院分区：
文献类型：
--
作者：
Tao Ang;Yao Tingting;Jiang Yixiao;Yang Lixin;Yan Xuexi;Ohta Hiromichi;Ikuhara Yuichi;Chen Chunlin;Ye Hengqiang;Ma Xiuliang
位错通常表现出与块体材料不同的独特物理性质。然而，由于构建高性能位错器件的困难，位错的功能应用是具有挑战性的。在这里，我们展示了单向单位错肖特基二极管阵列在铌掺杂srtio3衬底上的fe2o3薄膜。电导率测量使用导电原子力显微镜表明，净电流将流过个别位错肖特基二极管在正向偏压和消失在反向偏压。在循环偏置电压下，单位错肖特基二极管表现出明显的电阻开关行为，包含低电阻和高电阻状态，电阻比高达103。透射电镜和第一性原理计算相结合的研究表明，由于O缺乏，fe2o3位错由Fe2+和Fe3+离子混合组成，并表现出一维导电性。单位错肖特基二极管可用于开发超高密度电子和存储器件。
Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3thin film on Nb-doped SrTiO3substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of ∼103. A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3dislocations comprise mixed Fe2+and Fe3+ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices.