Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I
Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I
复制标题
采用轴对称环形喷嘴源的硅沉积工艺放大模型。
DOI：
10.1116/1.581672
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
I. Boyd
中科院分区：
文献类型：
--
作者：
G. Chen;I. Boyd
研究了一种新的利用超声分子束沉积硅薄膜的放大技术。小面积硅薄膜沉积在以前被证明是成功的。本研究的目的是通过数值方法研究使用轴对称环形源进行更大尺度沉积的可能性。研究发现，采用轴对称环形喷嘴源可以显著增加沉积面积，改善薄膜均匀性。模拟结果表明，均匀的硅生长在一个区域18厘米直径在155 A/min。环形喷嘴源和基板的喷嘴距离的几何效应进行了研究。还研究了源流量和泵送能力的影响。
The scale-up of a new silicon thin film deposition technique employing supersonic molecular beams is investigated. Small area silicon thin film deposition was proven successful previously. This study aims to investigate the possibility of a larger scale deposition using axisymmetric ring sources through the numerical approach. It is found that the use of axisymmetric ring nozzle sources can significantly increase the deposition area and improve the film uniformity. The simulations show a uniform silicon growth over an area 18 cm in diameter at ∼155 A/min. The geometrical effects of the ring nozzle sources and the substrate to nozzle distance are studied. The influence of the source flow rate and pumping capacity is also examined.