The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystals
The application of the ion microprobe analyser to the measurement of the distribution of boron ions implanted into silicon crystals
复制标题
离子探针分析仪在硅晶体注入硼离子分布测量中的应用
DOI：
10.1088/0022-3727/5/9/321
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发表时间：
1972
期刊：
影响因子：
--
通讯作者：
G. Dearnaley
中科院分区：
文献类型：
--
作者：
R. Gittins;D V Morgan;G. Dearnaley
用法国CAMECA离子探针分析仪测量了注入硅晶体的硼离子的深度分布。与该技术相关的两个问题，即规范化的曲线和尾部的外观上更深的一侧的高斯，已被研究。该技术提供了一个快速和简单的程序，并确定了投影范围的值，显示出良好的协议与其他技术。
The distribution in depth of boron ions implanted into silicon crystals has been measured using the French `CAMECA' ion microprobe analyser. Two problems associated with the technique, namely the normalization of the curves and the appearance of a tail on the deeper side of the gaussian, have been studied. The technique provides a rapid and simple procedure for profiling, and determines values of projected range which show good agreement with other techniques.