Transition between Electron Localization and Antilocalization in Graphene
Transition between Electron Localization and Antilocalization in Graphene
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DOI：
10.1103/physrevlett.103.226801
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发表时间：
2009-11-27
影响因子：
8.6
通讯作者：
Gorbachev, R. V.
中科院分区：
文献类型：
--
作者：
Tikhonenko, F. V.;Kozikov, A. A.;Gorbachev, R. V.
我们表明，量子干涉石墨烯可以导致反本地化的电荷载流子的电导，这是检测到的负的磁导的增加。我们证明，根据实验条件，可以观察到弱本地化或反本地化的载体在石墨烯。当载流子密度降低和温度升高时，发生从局域化到反局域化的转变。我们表明，石墨烯中的量子干涉可以在高温下生存，高达T类似于200 K，由于弱的电子-声子散射。
We show that quantum interference in graphene can result in antilocalization of charge carriers-an increase of the conductance, which is detected by a negative magnetoconductance. We demonstrate that depending on experimental conditions one can observe either weak localization or antilocalization of carriers in graphene. A transition from localization to antilocalization occurs when the carrier density is decreased and the temperature is increased. We show that quantum interference in graphene can survive at high temperatures, up to T similar to 200 K, due to weak electron-phonon scattering.