Effects of stacking fault on the diffraction intensities of β-FeSi2
Effects of stacking fault on the diffraction intensities of β-FeSi2
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堆垛层错对β-FeSi2衍射强度的影响
DOI：
10.1016/j.jallcom.2008.08.078
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发表时间：
2009
影响因子：
6.2
通讯作者：
Takahiro Yamada
中科院分区：
文献类型：
--
作者：
H. Yamane;Takahiro Yamada
β-FeSi2是通过将Si和Fe粉末的混合物与Na金属和Ar气体密封在不锈钢管中加热合成的。在 Na 熔体中于 873K 制备的 β-FeSi2 的电子衍射 (ED) 图案中观察到沿 a 轴拉长的漫反射条纹。在k+l=2n（n：整数）索引的点上没有出现条纹，这表明存在由（100）[011]/2滑移系引起的堆垛层错。采用 Rietveld 方法，采用基于堆垛层错结构的统计分裂位点模型，对在 Na 熔体中 873K 48 h 和在降低 Na 蒸气压下 1173K 24 h 制备的样品的粉末 X 射线衍射（XRD）图谱进行了分析。采用Rietveld方法，采用基于堆垛层错结构的统计裂点模型，对Na熔体中873K 48h和Na和Si混合物中蒸发的Na蒸气中1173K 24h制备的样品进行粉末X射线衍射图谱分析。在873和1173K制备的样品的正常堆垛层和堆垛层错层的比率估计分别为0.95:0.05和0.84:0.16。通过基于用于计算含有堆垛层错的晶体的衍射强度的通用递归方法的计算，很好地再现了所观察到的粉末X射线衍射图案的主要特征。
β-FeSi2was synthesized by heating mixtures of Si and Fe powder sealed with Na metal and Ar gas in a stainless tube. Diffuse streaks elongated along the a axis were observed in the electron diffraction (ED) patterns of β-FeSi2prepared at 873K in the Na melt. No streaks appeared on the spots indexed by k+l=2n (n: integer), which indicated existence of stacking faults caused by a slip system of (100)[011]/2. The powder X-ray diffraction (XRD) patterns of the samples prepared at 873K for 48h in the Na melt and at 1173K for 24h under reduced Na vapor pressure were analyzed by the Rietveld method with a statistical split-site model based on the stacking fault structure. The powder X-ray diffraction patterns of the samples prepared at 873K for 48h in the Na melt and at 1173K for 24h in Na vapor which evaporated from a mixture of Na and Si were analyzed by the Rietveld method with a statistical split-site model based on the stacking fault structure. The ratios of the normal stacking layer and stacking fault layer of the samples prepared at 873 and 1173K were estimated to be 0.95:0.05 and 0.84:0.16, respectively. Main features of the observed powder X-ray diffraction patterns were well reproduced by the calculation based on a general recursion method for calculating diffracted intensities from crystals containing stacking fault.
化学气相传输法生长β-FeSi2单晶
DOI：
--
发表时间：
2004
期刊：
Phys.stat.sol.(c) 1
影响因子：
--
作者：
M.Isshiki;et al.
通讯作者：
et al.