Field emission study of SiC nanowires/nanorods directly grown on SiC ceramic substrate
Field emission study of SiC nanowires/nanorods directly grown on SiC ceramic substrate
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DOI：
10.1063/1.2220481
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发表时间：
2006-07-10
影响因子：
4
通讯作者：
She, J. C.
中科院分区：
文献类型：
--
作者：
Deng, S. Z.;Li, Z. B.;She, J. C.
采用催化剂辅助加热的方法，在块体碳化硅陶瓷衬底表面直接生长了单晶碳化硅纳米线。研究发现，纳米线的形貌和直径对催化膜的厚度很敏感，对场发射性能有很大的影响。用小直径的碳化硅纳米线观察到很低的电子发射开启场和阈值电场。提出了一个模型来定性地解释场发射的发现，该模型假设在场发射纳米线中发生了绝缘体到金属的转变。(C)2006年美国物理研究所。
Single crystalline silicon carbide (SiC) nanowires were grown directly on the surface of bulk SiC ceramic substrate in a catalyst-assisted thermal heating process. The morphology of the nanowire film and the diameter of nanowires were found to be sensitive to the thickness of catalyst film and both of them had a strong effect on field emission performance. Very low turn-on and threshold fields for electron emission were observed with, SiC nanowires of small diameter. A model is proposed to qualitatively explain the field emission findings, which assumes the occurrence of an insulator-to-metal-like transition in a field emitting nanowire. (c) 2006 American Institute of Physics.