2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure
2.5 Gb/s Electroabsorption Modulator Integrated with Partially Gain-Coupled Distributed Feedback Laser Fabricated Using a Very Simple Device Structure
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DOI：
10.1143/jjap.38.l524
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发表时间：
1999-05
影响因子：
1.5
通讯作者：
Yi Luo;G. Wen;Changzheng Sun;Tong-ning Li;Xin-Min Yang;You-Sheng Wu;Ren-Fan Wang;Cai-Ling Wang;Tao Huang;Jinyan Jin
中科院分区：
文献类型：
--
作者：
Yi Luo;G. Wen;Changzheng Sun;Tong-ning Li;Xin-Min Yang;You-Sheng Wu;Ren-Fan Wang;Cai-Ling Wang;Tao Huang;Jinyan Jin
用非常简单的器件结构制作了与部分增益耦合分布反馈(DFB)半导体激光器集成的电吸收(EA)调制器。激光器的有源层和调制器的波导使用相同的外延层，以实现两个组件之间的波长兼容性。该器件的阈值电流为27 mA，-3V时的消光比大于17d B，光纤耦合功率为2.7 mW。封装模块也可用于2.5 Gb/S操作。在通过240公里的传统光纤传输后，在10-10比特误码率下的功率损失小于0.5分贝。根据实验数据，讨论了激光波长失谐对器件性能的影响。
An electroabsorption (EA) modulator integrated with a partially gain-coupled distributed feedback (DFB) semiconductor laser is fabricated using a very simple device structure. An identical epitaxtial layer is used for the active layer of the laser and the waveguide of the modulator to achieve wavelength compatibility between the two components. The fabricated device shows a low threshold current of 27 mA, a large extinction ratio of over 17 dB at -3 V, and a fiber coupled power of 2.7 mW. Packaged modules are also fabricated for 2.5 Gb/s operation. The power penalty at a 10-10 bit-error rate is less than 0.5 dB after transmission through 240 km of traditional fiber. The influence of lasing wavelength detuning on device performance is also discussed based on our experimental data.