Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
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DOI：
10.1021/nl500935z
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发表时间：
2014-05-01
期刊：
影响因子：
10.8
通讯作者：
Yang, Li
中科院分区：
文献类型：
--
作者：
Fei, Ruixiang;Yang, Li
新制备的几层黑磷及其单层结构磷烯，由于其有限的直接带隙和相当大但各向异性的电子迁移率，预计将有希望用于电子和光学应用。通过第一性原理模拟，我们表明，这种独特的各向异性的自由载流子迁移率可以通过使用简单的应变条件进行控制。通过适当的双轴或单轴应变（4-6%），我们可以将优选的导电方向旋转90度。这将有助于探索不寻常的量子霍尔效应和异国情调的电子和机械应用的磷烯。
Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90 degrees. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.