Low Resistive Micrometer-Thick SnS : Ag Films for Optoelectronic Applications
Low Resistive Micrometer-Thick SnS : Ag Films for Optoelectronic Applications
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DOI：
10.1149/1.2204870
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发表时间：
2006-08
影响因子：
3.9
通讯作者：
M. Devika;N. Reddy;K. Ramesh;K. Gunasekhar;E. Gopal;K. Reddy
中科院分区：
文献类型：
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作者：
M. Devika;N. Reddy;K. Ramesh;K. Gunasekhar;E. Gopal;K. Reddy
采用热蒸发技术在Coring 7059玻璃衬底上生长了厚度约0.5 μm的ag掺杂SnS薄膜，衬底温度为275℃。研究了掺杂对薄膜物理性能的影响。讨论了薄膜的物理特性，并将其与微观结构和电光性能联系起来。电光研究表明，在室温下，未掺杂的SnS薄膜的电阻率和光带隙分别为35.6 Ω cm和1.35 eV。随着银掺杂浓度的增加，SnS层的电阻率开始下降，在银掺杂浓度为15原子%时达到最小值6.98 Ω cm，之后又开始升高。随着银含量的增加，薄膜的光学带隙（Eg）呈非线性减小。得到了描述薄膜成分与能隙关系的经验公式Eg = 1.345-0.0014 X + 5.952 × 10 -5 X 2。研究了掺杂对SnS薄膜表面结构的影响。
Ag-doped SnS films have been grown with a thickness of ∼0.5 μm by thermal evaporation technique on Coring 7059 glass substrates at a substrate temperature of 275°C. The effects of doping on the physical properties of the films have been investigated. The physical characteristics of the films are discussed and correlated to the microstructural and electro-optical properties. Electro-optical studies show that undoped SnS films have an electrical resistivity and optical bandgap of 35.6 Ω cm and 1.35 eV at room temperature. With the increase of Ag dopant concentration, the resistivity of the SnS layers initially decreased, reached a minimum value of 6.98 Ω cm at 15 atom % of Ag and again increased thereafter. However, optical bandgap (Eg) of the films decreased nonlinearly with increase of Ag percentage. An empirical formula Eg = 1.345-0.0014 X + 5.952 × 10 -5 X 2 , which describes the energy gap as a function of the film composition, has been derived. The doping effect on the surface structure of SnS films was also studied.