Flux noise in ion-implanted nanoSQUIDs
Flux noise in ion-implanted nanoSQUIDs
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DOI：
10.1088/0953-2048/22/6/064006
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发表时间：
2009-06
影响因子：
3.6
通讯作者：
G. Tettamanzi;C. Pakes;S. Lam;S. Prawer
中科院分区：
文献类型：
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作者：
G. Tettamanzi;C. Pakes;S. Lam;S. Prawer
聚焦离子束（FIB）技术已被用于制造微型Nb DC SQUID（超导量子干涉器件），该器件包括反向分流的微桥结和中心环，其孔径范围为1058至50 nm。最小的器件孔径为50 nm，在104 Hz时的白色通量噪声水平为2.6 µΦ0 Hz−1/2。研究了SQUID的磁通噪声特性和聚焦效应随孔径的变化规律。所观察到的低频磁通噪声的不同设备进行了比较，由于FIB处理过程中引入的缺陷和SQUID垫圈中的热激活磁通跳跃的自旋波动的贡献。
Focused ion-beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs (superconducting quantum interference devices) which incorporate resistively shunted microbridge junctions and a central loop with a hole diameter ranging from 1058 to 50 nm. The smallest device, with a 50 nm hole diameter, has a white flux noise level of 2.6 µΦ0 Hz−1/2 at 104 Hz. The scaling of the flux noise properties and focusing effect of the SQUID with the hole size were examined. The observed low frequency flux noises of different devices were compared with the contribution due to the spin fluctuation of defects introduced during FIB processing and of thermally activated flux hopping in the SQUID washer.