High quality anatase TiO2 film:: Field-effect transistor based on anatase TiO2
High quality anatase TiO2 film:: Field-effect transistor based on anatase TiO2
复制标题
DOI：
10.1063/1.2906361
复制
发表时间：
2008-03-31
影响因子：
4
通讯作者：
Matsumoto, Yuji
中科院分区：
文献类型：
--
作者：
Katayama, Masao;Ikesaka, Shinya;Matsumoto, Yuji
我们提出了一种氧调制方法来生长高结晶度和绝缘性的锐钛矿薄膜。每生长1 nm厚的薄膜，重复一次低氧压沉积和高氧压退火的循环。尖锐的反射高能电子衍射图和阶梯状表面形貌证实了所获得的锐钛矿膜具有较高的结晶度，电阻率高达1.8M欧姆厘米。结果表明，本发明的锐钛矿型薄膜作为有源沟道在场效应管中表现出很高的性能。开关电流比和场效应迁移率分别超过10(5)和0.3 cm(2)/V S。(C)2008年美国物理研究所。
We proposed an oxygen modulation method for the growth of high crystalline and insulative anatase films. The cycle of deposition under low oxygen pressure and annealing under high oxygen pressure was repeated every 1 nm thick growth. The sharp reflection high-energy electron diffraction pattern and step-and-terrace surface morphology confirmed high crystallinity of the obtained anatase film; the resistivity reached as high as 1.8 M Omega cm. As a result, the present anatase film exhibited high performance in a field-effect transistor as an active channel. On-to-off current ratio and field-effect mobility exceeded 10(5) and 0.3 cm(2)/V s, respectively. (C) 2008 American Institute of Physics.