Versatile Thin-Film Transistor with Independent Control of Charge Injection and Transport for Mixed Signal and Analog Computation
Versatile Thin-Film Transistor with Independent Control of Charge Injection and Transport for Mixed Signal and Analog Computation
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DOI：
10.1002/aisy.202000199
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发表时间：
2021-01-01
影响因子：
7.4
通讯作者：
Sporea, Radu A.
中科院分区：
文献类型：
--
作者：
Bestelink, Eva;de Sagazan, Olivier;Sporea, Radu A.
新材料和优化的制造技术已经导致大面积电子器件的稳步发展，但只有在基础器件设计的新方法下才能取得重大进展。这里介绍的多峰薄膜晶体管提供了广泛的功能，这是由于电荷注入和传输的单独控制，基本上使用活性材料层的不同区域用于两个互补的器件功能，并且是材料不可知的。最初的实施使用成熟的流程来专注于设备的基本优势。开关速度提高了10倍，线性输入输出相关性和对工艺变化的耐受性使低失真放大器和信号转换器的复杂性降低。浮栅设计消除了有害的漏极电压耦合，以实现上级模拟存储器或计算。这款多功能器件为薄膜技术带来了重大的新机遇，包括用于边缘集成处理和高能效模拟计算的紧凑型电路。
New materials and optimized fabrication techniques have led to steady evolution in large area electronics, yet significant advances come only with new approaches to fundamental device design. The multimodal thin-film transistor introduced here offers broad functionality resulting from separate control of charge injection and transport, essentially using distinct regions of the active material layer for two complementary device functions, and is material agnostic. The initial implementation uses mature processes to focus on the device's fundamental benefits. A tenfold increase in switching speed, linear input-output dependence, and tolerance to process variations enable low-distortion amplifiers and signal converters with reduced complexity. Floating gate designs eliminate deleterious drain voltage coupling for superior analog memory or computing. This versatile device introduces major new opportunities for thin-film technologies, including compact circuits for integrated processing at the edge and energy-efficient analog computation.