Use of negative capacitance to provide voltage amplification for low power nanoscale devices
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
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DOI：
10.1021/nl071804g
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发表时间：
2008-02-01
期刊：
影响因子：
10.8
通讯作者：
Dattat, Supriyo
中科院分区：
文献类型：
--
作者：
Salahuddin, Sayeef;Dattat, Supriyo
众所周知，传统场效应晶体管(FET)需要在300K时沟道电势变化至少60 mV，才能使电流变化10倍，而这个最小的亚阈值斜率S给标准FET开关的工作电压和功耗设定了一个基本的下限。在这里，我们建议用合适厚度的铁电绝缘子代替标准绝缘子，可以实现升压式电压互感器，放大栅极电压，从而使S的值低于60毫伏/十，从而实现低电压/低功率运行。电压互感器的作用可以直观地理解为铁电电容器提供的有效负电容的结果，该电容产生于内部正反馈，原则上也可以从其他微观机制获得。与其他减少S的建议不同，这不涉及FET的基本物理变化，因此不影响其当前的驱动或施加其他限制。
It is well-known that conventional field effect transistors (FETs) require a change in the channel potential of at least 60 mV at 300 K to effect a change in the current by a factor of 10, and this minimum subthreshold slope S puts a fundamental lower limit on the operating voltage and hence the power dissipation in standard FET-based switches. Here, we suggest that by replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation. The voltage transformer action can be understood intuitively as the result of an effective negative capacitance provided by the ferroelectric capacitor that arises from an internal positive feedback that in principle could be obtained from other microscopic mechanisms as well. Unlike other proposals to reduce S, this involves no change in the basic physics of the FET and thus does not affect its current drive or impose other restrictions.