Design consideration for high output power density (OPD) converter based on power-loss limit analysis method

Design consideration for high output power density (OPD) converter based on power-loss limit analysis method
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基于功率损耗极限分析方法的高输出功率密度(OPD)转换器的设计考虑

DOI:
10.1109/epe.2005.219646
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发表时间:
2005
期刊:
2005 European Conference on Power Electronics and Applications
影响因子:
--
通讯作者:
H. Ohashi
H. Ohashi
中科院分区:
--
文献类型:
--
作者:
Y. Hayashi;K. Takao;K. Adachi;H. Ohashi

文献摘要

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设计考虑未来的高输出功率密度转换器已进行了功率器件损耗模型。采用功率损耗极限分析法建立了功率器件损耗模型,该方法考虑了电路杂散参数与器件功率损耗的相关性,准确估算了半导体功率器件的总功率损耗。该设计的优点是体积细节丰富,并且可以通过功率器件损耗模型定量估计转换器的输出功率密度。利用该方法研究了由变换电路部分、无源元件和直流侧电容组成的功率变换器的热优化配置问题。通过一个由Si-MOSFET和SiC-肖特基势垒二极管(SBD)混合对构成的3 kVA DC-AC变换器的定量设计,验证了该方法的有效性
Design consideration for a future high output power density converter has been carried out with a power device loss model. The power device loss model has been established by the power-loss limit analysis method which estimates total power loss of semiconductor power devices accurately taking the correlation between circuit stray parameters and device power losses into consideration. An advantage of the design is highly-detailed volume and an output power density of a converter can be estimated quantitatively by using the power device loss model. Optimal configuration of a power converter constructed by conversion circuit part, passive components and a DC-link capacitor was investigated on the thermal problem by the method. Availability of the method was confirmed by the quantitative design of a 3 kVA DC-AC converter constructed by a Si-MOSFET and a SiC-Shottky barrier diode (SBD) hybrid pair