Theoretical study of the optical gain characteristics of a Ge 1-x Sn x alloy for a short-wave infrared laser
Theoretical study of the optical gain characteristics of a Ge 1-x Sn x alloy for a short-wave infrared laser
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DOI：
10.1088/1674-1056/24/2/024211
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发表时间：
2015-02
影响因子：
1.7
通讯作者：
Dongliang Zhang;B. Cheng;C. Xue;Xu Zhang;H. Cong;Zhi Liu;Guangze Zhang;Qiming Wang
中科院分区：
文献类型：
--
作者：
Dongliang Zhang;B. Cheng;C. Xue;Xu Zhang;H. Cong;Zhi Liu;Guangze Zhang;Qiming Wang
Ge 1？xSnx进行了系统的模拟。注入载流子浓度为5？1018/cm ~ 3，Ge_（0.922）Sn_（0.078）合金（n型掺杂浓度为5？1018/cm 3）达到500？cm？1.此外，考虑到自由载流子的吸收效应，我们发现存在一个最佳的注入载流子密度，以获得最大的净光增益。设计了一种双异质Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157短波红外激光二极管，以实现高注入效率和低阈值电流密度。器件阈值电流密度Jth的模拟值为6.47？kA/cm 2（温度：200？K，所以？2050？nm），10.75？kA/cm 2（温度：200？K，所以？两千？23.12？kA/cm 2（温度：300？K，所以？两千一百？nm）。结果表明，有可能获得硅基短波红外Ge 1？xSnx激光器。
Optical gain characteristics of Ge1?xSnx are simulated systematically. With an injection carrier concentration of 5 ? 1018/cm3 at room temperature, the maximal optical gain of Ge0.922Sn0.078 alloy (with n-type doping concentration being 5 ? 1018/cm3) reaches 500?cm?1. Moreover, considering the free-carrier absorption effect, we find that there is an optimal injection carrier density to achieve a maximal net optical gain. A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density. The simulation values of the device threshold current density Jth are 6.47?kA/cm2 (temperature: 200?K, and ? = 2050?nm), 10.75?kA/cm2 (temperature: 200?K, and ? = 2000?nm), and 23.12?kA/cm2 (temperature: 300?K, and ? = 2100?nm), respectively. The results indicate the possibility to obtain a Si-based short-wave infrared Ge1?xSnx laser.