Bandgap tuning and optimization of green-emitting Zn2SnO4-Mg2SnO4:Mn2+ using combinatorial pulsed laser deposition
Bandgap tuning and optimization of green-emitting Zn2SnO4-Mg2SnO4:Mn2+ using combinatorial pulsed laser deposition
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DOI：
10.1016/j.ceramint.2020.05.288
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发表时间：
2020-09
影响因子：
5.2
通讯作者：
Takuro Dazai;S. Yasui;T. Taniyama;M. Itoh
中科院分区：
文献类型：
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作者：
Takuro Dazai;S. Yasui;T. Taniyama;M. Itoh
采用组合脉冲激光沉积法制备了Mn ~（2+）掺杂的Zn_2SnO_4-Mg_2SnO_4（Mn-ZMTO）薄膜。薄膜的成分由Zn 2SnO 4（ZTO）逐渐转变为Mg 2SnO 4（MTO）。此外，晶格常数随着MTO组成的增加而减小。在紫外光照射下，薄膜呈现出明亮的绿色发光，这归因于Mn 2+的4 T1 → 6A 1跃迁。这是在富ZTO侧观察到Mn-ZMTO的绿色发光的报告。此外，最强的发光位于样品的中心。在不同的激发波长下照射改变了发射强度和最强位置。这是澄清的位置依赖性的PLE光谱。所制备的薄膜的带隙，这对应于PLE峰波长，是大于体材料，并随着Mg浓度的增加而增加。由于Mn掺杂的ZTO通常不能观察到发光，因此我们认为所制备的薄膜的发光是由于沿着厚度方向的一维薄膜尺寸效应引起的带隙增加引起的。因此，使用薄膜技术，我们发现，带隙调谐是重要的磷光体材料。
We investigated a compositional spread Mn2+-doped Zn2SnO4-Mg2SnO4(Mn-ZMTO) film prepared by combinatorial pulsed laser deposition. The composition of the prepared film gradually changed from Zn2SnO4(ZTO) to Mg2SnO4(MTO). Moreover, the lattice constant decreased with an increase in MTO composition. Under ultraviolet irradiation, the film exhibited bright green luminescence attributable to the transition from4T1to6A1of Mn2+. This is the report of the observation of green luminescence from Mn-ZMTO on the ZTO-rich side. In addition, the most intense luminescence was located at the center of the sample. The emission intensity and the most intense position were changed by irradiation at various excitation wavelengths. This was clarified by the positional dependence of PLE spectra. The bandgap of the prepared film, which corresponded to the PLE peak wavelength, was larger than that of the bulk material and increased with an increase in Mg concentration. Since emission cannot usually be observed from Mn-doped ZTO, we suggest that the luminescence from the prepared film was caused by an increase in the bandgap attributable to the 1-dimentional thin film size effect along thickness direction. Thus, using the thin film technique we revealed that bandgap tuning is important in phosphor material.