Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method
Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method
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DOI：
10.1063/1.4826501
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发表时间：
2013-10
影响因子：
4
通讯作者：
T. Tsukamoto;N. Hirose;A. Kasamatsu;T. Mimura;T. Matsui;Y. Suda
中科院分区：
文献类型：
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作者：
T. Tsukamoto;N. Hirose;A. Kasamatsu;T. Mimura;T. Matsui;Y. Suda
用我们的溅射外延方法研究了掺硼Si(001)衬底上Ge层的形成。在Si衬底上生长的Ge层的表面形貌与衬底电阻有关，在电阻率为0.015Ωcm的Si衬底上可以得到平坦的Ge层。高掺硼的Si衬底使位错结构从具有60°位错滑动面的复杂位错向90°纯刃位错转变，形成平坦的Ge层。此外，我们还发现，随着Ge层厚度的增加，Ge层的表面形貌有所改善。在沉积的Ge层上迁移的Ge原子倾向于将自己定位在反应位置，在那里反应活性与Ge原子与表面之间的成键接触数有关。这会修改曲面形态，从而产生更平坦的曲面。B掺杂与溅射外延法相结合，有效地抑制了Ge岛的生长，形成了平坦的Ge层。
The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.