Carrier generation in a p-type oxide semiconductor: Sn2(Nb2-xTax)O7
Carrier generation in a p-type oxide semiconductor: Sn2(Nb2-xTax)O7
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DOI：
10.1103/physrevmaterials.1.021601
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发表时间：
2017-07-12
影响因子：
3.4
通讯作者：
Nishio, Keishi
中科院分区：
文献类型：
--
作者：
Kikuchi, Naoto;Samizo, Akane;Nishio, Keishi
在晶体生长过程中，通过退火条件控制晶格缺陷，制备出宽间隙p型半导体Sn-2(Nb2-xTax)O-7 （x = 0-2）。带隙在Sn2Nb2O7 （x = 0）的2.4 eV到Sn2Ta2O7 （x = 2）的3.0 eV之间变化。估计载流子密度和空穴迁移率分别为0.20-1.4 (x 10（18) cm(-3)）和0.28-1.9 (x 10(-1) cm（2) V-1 s(-1)）。根据缺陷含量与电学性质的相互关系，我们得出p型半导体Sn-2(Nb2-xTax)O-7中的空穴载流子是由（Nb, Ta）(2)O-6八面体链中的Sn4+-on-Nb5+/Ta5+取代缺陷产生的。
By controlling lattice defects through the annealing condition during crystal growth, a wide-gap and p-type semiconductor Sn-2(Nb2-xTax)O-7 (x = 0-2) was developed. The band gap is variable in the range from 2.4 eV for Sn2Nb2O7 (x = 0) to 3.0 eV for Sn2Ta2O7 (x = 2), respectively. The carrier density and the hole mobility were estimated to be 0.20-1.4 (x 10(18) cm(-3)) and 0.28-1.9 (x 10(-1) cm(2) V-1 s(-1)), respectively. From the mutual relation between the defect content and the electrical properties, we concluded that the hole carriers in the p-type semiconducting Sn-2(Nb2-xTax)O-7 are generated by Sn4+-on-Nb5+/Ta5+ substitutional defects in (Nb, Ta)(2)O-6 octahedral chains.