Characteristics of Mg-Doped GaN and AlGaN Grown by H2-Ambient and N2-Ambient Metalorganic Chemical Vapor Deposition
Characteristics of Mg-Doped GaN and AlGaN Grown by H2-Ambient and N2-Ambient Metalorganic Chemical Vapor Deposition
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H2 环境和 N2 环境金属有机化学气相沉积生长的镁掺杂 GaN 和 AlGaN 的特性
DOI：
10.1143/jjap.37.3878
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发表时间：
1998
影响因子：
1.5
通讯作者：
M. Ishikawa
中科院分区：
文献类型：
--
作者：
L. Sugiura;Mariko Suzuki;J. Nishio;K. Itaya;Y. Kokubun;M. Ishikawa
比较了H2气氛和N2气氛金属有机物化学气相沉积法生长的Mg掺杂GaN和AlGaN的特性。在氢气气氛下生长的Mg掺杂GaN和AlGaN显示出高电阻率，而在氮气气氛下生长的p型GaN和AlGaN具有高受主浓度，无需任何后处理。在N2气氛下生长时，Mg受体的氢化过程和Mg-H络合物中氢原子的解离过程可能同时发生。在N2气氛下生长的膜清楚地显示出在均匀性和再现性方面比在H2气氛下生长的膜具有上级特性，因为在N2气氛下生长的膜的特性在宽的生长温度范围内是稳定的。研究结果表明，氮气气氛下生长的GaN基发光器件不仅可以简化器件的制作工艺，而且可以提高器件的均匀性和重复性，适合于大规模生产。
The characteristics of Mg-doped GaN and AlGaN grown by H2-ambient and N2-ambient metalorganic chemical vapor deposition are compared and discussed. While as-grown Mg-doped GaN and AlGaN grown under H2-ambient show high resistivity, p-type GaN and AlGaN with high acceptor concentration were obtained by N2-ambient growth without any post-treatment. The hydrogenation process of the Mg acceptor and the dissociation process of hydrogen atoms from Mg–H complexes might occur simultaneously in the case of N2-ambient growth. The films grown under N2-ambient were clearly shown to have superior characteristics in uniformity and reproducibility to those grown under H2-ambient, since the characteristics of the films grown under N2-ambient are steady over the wide range of growth temperature. Our results indicate that the N2-ambient growth is suitable for the mass production of GaN-based light-emitting devices in the respects that the device fabrication process can be simplified and that the uniformity and the reproducibility of the layer properties are greatly improved.