Nano-cone resistive memory for ultralow power operation
Nano-cone resistive memory for ultralow power operation
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DOI：
10.1088/1361-6528/aa5e72
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发表时间：
2017-03-24
期刊：
影响因子：
3.5
通讯作者：
Park, Byung-Gook
中科院分区：
文献类型：
--
作者：
Kim, Sungjun;Jung, Sunghun;Park, Byung-Gook
基于SiNx的纳米结构阻性存储器采用全硅兼容工艺集成，包括为构造纳米锥形硅底电极(BE)而特别设计的各向异性腐蚀。与平坦Be结构相比，双极电阻开关特性显著降低了开关电流和电压，并在纳米锥形Be结构中得到了体现。我们已经通过系统的器件模拟验证了性能参数降低的主要原因是高电场更有效地集中在锥形Be的尖端。纳米锥形阻性存储单元的非线性得到了极大的改善，将有利于超高密度交叉开关阵列的实现。
SiNx-based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.