Spin–orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayer
Spin–orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayer
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DOI：
10.1063/5.0032732
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发表时间：
2021-02
期刊：
影响因子：
1.6
通讯作者：
Kohey Jono;Fumiaki Shimohashi;M. Yamanouchi;T. Uemura
中科院分区：
文献类型：
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作者：
Kohey Jono;Fumiaki Shimohashi;M. Yamanouchi;T. Uemura
我们研究了 Mn1.8Ga1.0 (MnGa) 单层和 MnGa/Co2MnSi (CMS) 双层的自旋轨道扭矩 (SOT) 感应磁化翻转和 SOT 效率。磁化测量表明，超薄 MnGa 和 CMS 彼此反铁磁耦合，具有清晰的垂直磁化强度。 MnGa/CMS/Ta 和 MnGa/Ta 堆栈均观察到 SOT 引起的磁化翻转，并且 MnGa/CMS/Ta 堆栈中的翻转电流减少了一半。对作用在畴壁上的 SOT 的检查表明，MnGa/CMS/Ta 叠层中源自 SOT 的有效磁场大约是 MnGa/Ta 叠层中的五倍强。这些结果表明MnGa/CMS双层结构可有效提高SOT的生成效率。
We investigated spin–orbit torque (SOT) induced magnetization switching and SOT efficiency for Mn1.8Ga1.0 (MnGa) single layers and MnGa/Co2MnSi (CMS) bilayers. Magnetization measurements showed that ultrathin MnGa and CMS were antiferromagnetically coupled to each other with clear perpendicular magnetization. SOT-induced magnetization switching was observed for both MnGa/CMS/Ta and MnGa/Ta stacks, and the switching current was reduced by a half in the MnGa/CMS/Ta stack. Examination of SOT acting on the domain walls revealed that the effective magnetic field originating from the SOT was approximately five times stronger in the MnGa/CMS/Ta stack than in the MnGa/Ta stack. These results indicate that the MnGa/CMS bilayer structure is effective in enhancing the efficiency of SOT generation.