Surface carbonization of Si(111) by C2H2 and the subsequent SiC(111) epitaxial growth from SiH4 and C2H2
Surface carbonization of Si(111) by C2H2 and the subsequent SiC(111) epitaxial growth from SiH4 and C2H2
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DOI：
10.1016/j.jcrysgro.2004.02.022
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发表时间：
2004-05-01
影响因子：
1.8
通讯作者：
Hong, LS
中科院分区：
文献类型：
--
作者：
Hu, MS;Hong, LS
以甲烷为碳源，在1343K和5Torr的热化学气相沉积反应器中对Si(111)表面碳化进行了研究。用原子力显微镜和X射线光电子能谱分析技术研究了碳化过程随处理时间的变化规律。结果表明，在a C，H，分压为5.0×10(-2)Torr的条件下，碳化5min后，碳化硅的初始成核使表面粗糙度增加到0.2 nm。当碳化时间达到8min时，碳化硅晶核饱和，表面粗糙度在饱和碳化硅厚度约为1.4 nm时恢复到原来的值。随后在8min碳化表面进行了碳化硅(1 1 1)外延生长，表面光滑，界面无空洞。(C)2004爱思唯尔B.V.保留所有权利。
Surface carbonization of Si(1 1 1) using CH, as the carbon source was performed at 1343 K and 5 Torr in a thermal chemical vapor deposition reactor. The evolution of the carbonization process as a function of the CH, treatment time was investigated using atomic force microscopy and X-ray photoemission spectroscopy analytical techniques. It was found that at a C,H, partial pressure of 5.0 x 10(-2) Torr, the initial SiC nucleation proceeds to increase the surface roughness up to 0.2 nm after 5 min carbonization. When the carbonization is performed up to 8 min, the SiC nuclei saturate, reducing the surface roughness back to its original value at a saturation SiC thickness of about 1.4 nm. Subsequent SiC(1 1 1) epitaxial growth on the 8 min-carbonization surface was found to have a smooth surface morphology and void-free interface. (C) 2004 Elsevier B.V. All rights reserved.