Retention trimming for wear reduction of flash memory storage systems
Retention trimming for wear reduction of flash memory storage systems
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DOI：
10.1145/2593069.2593203
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
Liang Shi;Kaijie Wu;Mengying Zhao;C. Xue;E. Sha
中科院分区：
文献类型：
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作者：
Liang Shi;Kaijie Wu;Mengying Zhao;C. Xue;E. Sha
NAND闪存已广泛应用于嵌入式系统、个人计算机系统和数据中心。然而，随着闪存的发展，包括其技术规模化和密度的提高，闪存的耐用性成为瓶颈。在这项工作中，通过了解数据保留时间和闪存磨损之间的关系，提出了一种根据数据更新之间的时间间隔来修剪数据保留时间的保留修剪方法，以减少闪存的磨损。减少闪存的磨损将提高闪存的耐用性。大量的实验结果表明，所提出的技术通过保留修整显着减少了闪存的磨损。
NAND flash memory has been widely applied in embedded systems, personal computer systems, and data centers. However, with the development of flash memory, including its technology scaling and density improvement, the endurance of flash memory becomes a bottleneck. In this work, with the understanding of the relationship between data retention time and flash wearing, a retention trimming approach, which trims data retention time based on the time intervals between data updating, is proposed to reduce the wearing of flash memory. Reduced wearing of flash memory will improve the endurance of the flash memory. Extensive experimental results show that the proposed technique achieves significant wearing reduction for flash memory through retention trimming.