Digital active gate drive of SiC MOSFETs for controlling switching behavior---Preparation toward universal digitization of power switching
Digital active gate drive of SiC MOSFETs for controlling switching behavior---Preparation toward universal digitization of power switching
复制标题
用于控制开关行为的 SiC MOSFET 数字有源栅极驱动——为功率开关通用数字化做好准备
DOI：
10.1002/cta.3136
复制
发表时间：
2022
影响因子：
2.3
通讯作者：
Hikihara Takashi
中科院分区：
文献类型：
--
作者：
Takayama Hajime;Okuda Takafumi;Hikihara Takashi
本文提出了一种用于SiC功率MOSFET的数字有源栅极驱动器。采用SiC功率MOSFET的高频开关可以实现更高功率密度的集成功率电路。然而，快速开关所引起的大浪涌电压和振铃会使器件失去可靠性并增加电磁干扰（EMI）问题。为了实现没有这些缺点的高频开关，设计了一种基于数模转换器架构的有源栅极驱动器。考虑到器件特性和各种电路条件，MOSFET的栅源电压波形由多位栅极信号序列直接灵活地生成。有效的门信号序列进行了研究，通过专注于开关轨迹上的状态空间的设备，这是离散控制，通过连续的工作点之间的过渡。实验和仿真结果证实了所提出的栅极驱动器有效地抑制和调节关断期间的浪涌电压和振铃。
In this paper, a digital active gate driver for SiC power MOSFETs is proposed. High‐frequency switching with SiC power MOSFETs can realize an integrated power circuit with higher power density. However, the large surge voltage and ringing caused by the fast switching will lose the reliability of the device and increase electromagnetic interference (EMI) problems. To achieve high‐frequency switching without these drawbacks, an active gate driver based on the architecture of a digital‐to‐analog converter has been designed. The gate‐source voltage waveform of the MOSFET is generated directly and flexibly by a multibit gate signal sequence, considering the device characteristics and a variety of circuit conditions. Effective gate signal sequences are investigated by focusing on the switching trajectory on the state space of the device, which is discretely controlled through successive transitions between operating points. Experimental and simulated results confirm that the proposed gate driver effectively suppresses and regulates the surge voltage and ringing during turn‐off.