Secondary Ionization Coefficient of MgO Film in Argon
Secondary Ionization Coefficient of MgO Film in Argon
复制标题
MgO薄膜在氩气中的二次电离系数
DOI：
10.1143/jjap.43.7234
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发表时间：
2004
影响因子：
1.5
通讯作者：
H. Itoh
中科院分区：
文献类型：
--
作者：
Susumu Suzuki;H. Itoh
根据等离子体显示屏中MgO电极间自持放电的起始电压，估算了MgO在Ar中的二次电离系数。采用Monte Carlo模拟和汤森自持放电判据讨论了电池中电子群的输运特性。这种技术允许在非平衡电子能量分布下精确计算电子群的行为。
The secondary ionization coefficient of MgO in Ar is estimated from the measured starting voltage of self-sustaining discharge between MgO electrodes in a plasma display panel. Monte Carlo simulation and Townsend's criterion of self-sustaining discharge are employed to discuss the electron transport characteristics of the electron swarm in the cell. This technique allows for precise calculations of the behavior of the electron swarm under a nonequilibrium electron energy distribution.