Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
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通过分子束外延在 GaAs (411)A 衬底上生长的 GaAs/AlGaAs 量子阱中的极其平坦的界面
DOI：
10.1143/jjap.32.l1728
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发表时间：
1993
影响因子：
1.5
通讯作者：
S. Hiyamizu
中科院分区：
文献类型：
--
作者：
S. Shimomura;A. Wakejima;A. Adachi;Y. Okamoto;N. Sano;K. Murase;S. Hiyamizu
通过分子束外延（MBE）在（411）A取向的GaAs衬底上生长的GaAs/Al 0.3 Ga0.7 As量子威尔斯（QW）即使在没有生长中断的情况下，也在宏观区域（约200 µm φ）上显示出极其平坦的界面，这主要是由于Ga原子固有的大量迁移和（411）A平面上阶流模式的层生长。在4.2K下的光致发光线宽几乎等于或优于GaAs/AlGaAs和GaAs/AlAs量子阱在GaAs（100）衬底上生长的最宽线宽，每个GaAs/AlGaAs（AlAs）界面处生长中断。在（411）A衬底上的每个量子阱仅观察到一个尖锐的发光峰，而在（100）衬底上的量子阱观察到三个发光峰，这表明在（411）A GaAs衬底上生长的GaAs/AlGaAs量子阱在激光激发的宏观区域（直径200 μm）上实现了极其平坦和均匀的界面。
GaAs/Al0.3Ga0.7As quantum wells (QWs) grown on (411)A-oriented GaAs substrates by molecular beam epitaxy (MBE) showed extremely flat interfaces over a macroscopic area (about 200 µm φ) even for the case of no growth interruption, which is mainly due to the intrinsically large migration of Ga atoms and layer growth in the step-flow mode on the (411)A plane. Photoluminescence linewidths at 4.2K were almost the same as or better than the narrowest linewidths reported for GaAs/AlGaAs and GaAs/AlAs QWs grown on GaAs (100) substrates with growth interruption at each GaAs/AlGaAs(AlAs) interface. Only one sharp luminescence peak was observed for each QW on the (411)A substrates, in contrast with three luminescence peaks for the QWs on the (100) substrates, indicating that extremely flat and uniform interfaces over a macroscopic area of laser excitation (200 µm diameter) are realized in the GaAs/AlGaAs QWs grown on (411)A GaAs substrates.