Nanocrystal Diffusion Doping
Nanocrystal Diffusion Doping
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DOI：
10.1021/ja4072207
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发表时间：
2013-09-25
影响因子：
15
通讯作者：
Gamelin, Daniel R.
中科院分区：
文献类型：
--
作者：
Vlaskin, Vladimir A.;Barrows, Charles J.;Gamelin, Daniel R.
一种基于扩散的掺杂胶体半导体纳米晶体的合成方法。这种方法涉及在平衡条件下将杂质阳离子和主体阴离子两者以动力学控制的方式添加到预先形成的种子纳米晶体，而不是在生长期间以动力学控制的方式掺杂。该化学允许制备热力学晶体组合物而不牺牲其他动力学捕获的性质，例如形状、尺寸或结晶相。因此，这种掺杂化学与阳离子交换反应有一些相似之处，但在不损失主体阳离子的情况下进行，并且在引入相对不反应的杂质离子方面表现出色，这些杂质离子以前使用阳离子交换是不可接近的。具体来说，我们证明了Cd 1-xMnxSe（0
A diffusion-based synthesis of doped colloidal semiconductor nanocrystals is demonstrated. This approach involves thermodynamically controlled addition of both impurity cations and host anions to preformed seed nanocrystals under equilibrium conditions, rather than kinetically controlled doping during growth. This chemistry allows thermodynamic crystal compositions to be prepared without sacrificing other kinetically trapped properties such as shape, size, or crystallographic phase. This doping chemistry thus shares some similarities with cation-exchange reactions, but proceeds without the loss of host cations and excels at the introduction of relatively unreactive impurity ions that have not been previously accessible using cation exchange. Specifically, we demonstrate the preparation of Cd1-xMnxSe (0